Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

Author

Özbay, Ekmel ; Islam, M. Saiful ; Onat, Bora ; Gökkavas, Mutlu ; Aytür, Orhan ; Tuttle, Gary ; Towe, Elias ; Henderson, R.H. ; Ünlü, M. Selim

Author_Institution

Dept. of Phys., Bilkent Univ., Ankara, Turkey

Volume

9

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

672

Lastpage

674

Abstract

We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In/sub 0.08/Ga/sub 0.92/As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.

Keywords

Schottky diodes; gallium arsenide; mirrors; optical communication equipment; optical fabrication; optical resonators; photodetectors; photodiodes; semiconductor technology; 18 ps; 20 GHz; 895 nm; AlAs-GaAs; GaAs; GaAs-based high-speed resonant cavity enhanced Schottky photodiode fabrication; In/sub 0.08/Ga/sub 0.92/As; RCE detector; Schottky contact; Schottky contact metal; Schottky photodiode testing; distributed AlAs-GaAs Bragg mirror; enhancement factor; experimental setup limited temporal response; full-width-at-half-maximum; high-reflectivity top mirror; high-speed resonant cavity enhanced Schottky photodiodes; microwave-compatible fabrication process; photodiode; spectral photo response; thin absorption region; Bandwidth; Detectors; Electromagnetic wave absorption; Fabrication; Microwave devices; Mirrors; Photodiodes; Resonance; Schottky barriers; Testing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.588199

Filename

588199