Title :
A monolithically integrated 1 x 4 switchable photodiode array with preamplifier for programmable frequency filters and optical interconnects
Author :
Yu, S. ; Thomson, K.J. ; Forrest, S.R. ; Mykietyn, E. ; Lange, M. ; Olsen, G.H.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
An InGaAs-InP 1×4 p-i-n photodiode array has been monolithically integrated with switching junction field-effect transistors and a transimpedance preamplifier. The switching on-off ratio at the output of the preamplifier is 60 dB. As an optical receiver, the circuit has a 3-dB bandwidth of 1.1 GHz and a sensitivity of -25 dBm at 1 Gb/s, BER=10/sup -9/, and 1.55-μm wavelength. A programmable frequency filter has been demonstrated as an application of this novel circuit.
Keywords :
III-V semiconductors; JFET integrated circuits; electro-optical switches; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; p-i-n photodiodes; photodetectors; preamplifiers; sensitivity; wavelength division multiplexing; 1 Gbit/s; 1.1 GHz; 1.55 mum; InGaAs-InP; InGaAs-InP 1/spl times/4 p-i-n photodiode array; monolithically integrated; monolithically integrated 1/spl times/4 switchable photodiode array; optical interconnects; optical receiver; preamplifier; programmable frequency filter; programmable frequency filters; sensitivity; switching junction field-effect transistors; switching on-off ratio; transimpedance preamplifier; Bandwidth; Circuits; FETs; Frequency; Optical arrays; Optical filters; Optical interconnections; Optical receivers; PIN photodiodes; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
