Title :
A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology
Author :
Kim, Dong-Hyun ; Rieh, Jae-Sung
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
A 135 GHz Gm-boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18- μm SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P-1 dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm2 of chip area excluding pad region.dual baluns
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; mixers (circuits); BiCMOS technology; Gm-boosted down-conversion active mixer; LO-RF isolation; SiGe; current 1.3 mA; differential active star mixer; differential-mode conversion; fixed LO frequency; frequency 134.7 GHz; frequency 135 GHz; gain 11.5 dB; gain 31 dB; size 0.18 mum; voltage 3 V; BiCMOS integrated circuits; Gain; Impedance matching; Mixers; Radio frequency; Silicon germanium; Topology; Gain; millimeter-wave circuits; mixers;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2012.2205909
