DocumentCode :
1555532
Title :
Noise figure of vertical-cavity semiconductor optical amplifiers
Author :
Björlin, E. Staffan ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
38
Issue :
1
fYear :
2002
fDate :
1/1/2002 12:00:00 AM
Firstpage :
61
Lastpage :
66
Abstract :
The noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) is investigated theoretically and experimentally. Limitations on the noise figure set by the reflectivity of the mirrors are studied. Highly reflective mirrors lead to increased output noise as well as lasing at moderate carrier densities, which imposes a limit on the obtainable population inversion. Expressions for the excess noise coefficient, which governs signal-spontaneous beat noise enhancement due to finite mirror reflectivity, are presented for transmission and reflection-mode operation. Experimental results from a VCSOA operating in the reflection mode at 1.3 μm are presented. The results, from optical as well as electrical measurement techniques, are analyzed and compared to theoretical values
Keywords :
carrier density; laser mirrors; laser modes; laser noise; laser transitions; optical testing; population inversion; reflectivity; semiconductor device noise; semiconductor device testing; semiconductor optical amplifiers; surface emitting lasers; 1.3 micron; electrical measurement techniques; excess noise coefficient; finite mirror reflectivity; highly reflective mirrors; moderate carrier densities; noise figure; obtainable population inversion; on-wafer testing; optical communication systems; optical measurement techniques; output noise; reflection-mode operation; signal-spontaneous beat noise enhancement; transmission mode operation; vertical-cavity semiconductor optical amplifiers; Acoustic reflection; Charge carrier density; Measurement techniques; Mirrors; Noise figure; Optical noise; Optical reflection; Reflectivity; Semiconductor device noise; Semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.973320
Filename :
973320
Link To Document :
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