DocumentCode :
1555539
Title :
Crosstalk in 1.5-μm InGaAsP optical amplifiers
Author :
Lassen, H.E. ; Hansem, P.B. ; Stubkjaer, K.E.
Author_Institution :
Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
Volume :
6
Issue :
10
fYear :
1988
fDate :
10/1/1988 12:00:00 AM
Firstpage :
1559
Lastpage :
1565
Abstract :
A dynamical model for multichannel amplification by near-traveling-wave optical amplifiers is presented, and results on crosstalk induced by either amplitude modulation or frequency modulation are given. The mechanisms influencing the crosstalk most are the residual facet reflectivities and the detuning of the channels relative to the amplifier Fabry-Perot spectrum. Calculations of worst-case crosstalk levels are included. The model is verified experimentally for amplitude-modulated signals, and crosstalk levels up to -7 dB are reported. For frequency-modulated signals, estimated crosstalk is significantly lower and can be reduced by high quality facet coatings
Keywords :
III-V semiconductors; amplitude modulation; crosstalk; frequency modulation; gallium arsenide; indium compounds; laser beam applications; optical modulation; 1.5 micron; Fabry-Perot spectrum; III-V semiconductors; InGaAsP optical amplifiers; amplitude modulation; crosstalk; detuning; frequency modulation; multichannel amplification; residual facet reflectivities; Amplitude modulation; Fabry-Perot; Frequency estimation; Frequency modulation; Optical amplifiers; Optical crosstalk; Optical modulation; Reflectivity; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.7916
Filename :
7916
Link To Document :
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