Analysis of capacitor breakdown mechanisms due to crystal-originated pits

Author

Ono, Toshiaki ; Rozgonyi, George ; Horie, Hiroshi ; Miyazaki, Morimasa ; Tsuya, Hideki

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

20

Issue

10

fYear

1999

Firstpage

504

Lastpage

506

Abstract

The extent to which crystal originated defect pits (COPs) will enhance capacitor B-mode failures has been examined as a function of substrate carrier type/dopant concentration and bias mode (accumulation/inversion). An unexpected immunity to COPs, found for n-type capacitors biased into accumulation, could be readily explained by invoking Fowler-Nordheim (FN) tunneling variations due to the morphology of the capacitor electrodes, as revealed by cross-sectional TEM on simulated COPs formed by KOH anisotropic etching.

Keywords

MOS capacitors; etching; point defects; semiconductor device breakdown; semiconductor device reliability; transmission electron microscopy; tunnelling; Czochralski Si wafers; Fowler-Nordheim tunneling variations; KOH; KOH anisotropic etching; MOS capacitor breakdown mechanisms; Si; Si-SiO/sub 2/; accumulation bias mode; capacitor B-mode failures; capacitor electrode morphology; cross-sectional TEM; crystal originated defect pits; crystal-originated pits; dopant concentration; gate oxide integrity; inversion bias mode; light point defects; n-type capacitors; substrate carrier type; Electric breakdown; Etching; Face detection; Instruments; Laser modes; MOS capacitors; Silicon; Substrates; Surface emitting lasers; Surface morphology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.791924

Filename

791924