Title :
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
Author :
Lu, W. ; Wang, X.W. ; Hammond, R. ; Kuliev, A. ; Koester, S. ; Chu, J.O. ; Ismail, K. ; Ma, T.P. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Using high-quality jet-vapor-deposited (JVD) SiN as gate dielectric, p-type SiGe transistors are fabricated on SiGe heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD). For an 0.25-μm gate-length device, the gate leakage current is as small as 2.4 nA/mm at V/sub ds/=-1.0 V and V/sub gn/=0.4 V. A maximum extrinsic transconductance of 167 mS/mm is measured. A unity current gain cutoff frequency of 27 GHz and a maximum oscillation frequency of 35 GHz are obtained.
Keywords :
Ge-Si alloys; MOSFET; chemical vapour deposition; high electron mobility transistors; leakage currents; microwave field effect transistors; semiconductor device measurement; semiconductor materials; silicon compounds; -1 V; 0.25 mum; 0.4 V; 167 mS/mm; 27 GHz; 45 GHz; MOS-MODFET; Si/sub 0.7/Ge/sub 0.3/-SiN; SiGe heterostructures; SiN gate dielectric; drain subthreshold current; gate leakage current; gate-length device; high-quality jet-vapor-deposited SiN; low gate leakage; maximum extrinsic transconductance; maximum oscillation frequency; p-SiGe transistors; ultra-high-vacuum chemical vapor deposition; unity current gain cutoff frequency; Chemical vapor deposition; Current measurement; Cutoff frequency; Dielectrics; Gate leakage; Germanium silicon alloys; Leakage current; Silicon compounds; Silicon germanium; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
