Title :
Pseudomorphic InP HEMTs with dry-etched source vias having 190 mW output power and 40% PAE at V-band
Author :
Grundbacher, R. ; Lai, R. ; Nishimoto, M. ; Chin, T.P. ; Chen, Y.C. ; Barsky, M. ; Block, T. ; Streit, D.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We report state-of-the-art V-band power performance of 0.15-μm gate length InGaAs/InAlAs/InP HEMT´s which have 15 μm×23 μm dry-etched through-substrate source vias (substrate thickness 50 μm). The 500-μm wide InP HEMT´s were measured in fixture at 60 GHz and demonstrated an output power of 190 mW with 40% power-added efficiency (PAE) and 6.8 dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device. The results are achieved through optimization of the InP-based heterostructure which incorporates a graded pseudomorphic InGaAs channel and a graded pseudomorphic InAlAs Schottky barrier layer, and the use of 15 μm×23 μm dry-etched through-substrate source vias.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device measurement; semiconductor device metallisation; sputter etching; 0.15 mum; 15 mum; 190 mW; 25 mum; 40 percent; 500 mum; 6.8 dB; 60 GHz; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT; InP; InP-based heterostructure; V-band power performance; dry-etched source vias; dry-etched through-substrate source vias; gate length; graded pseudomorphic InAlAs Schottky barrier layer; graded pseudomorphic InGaAs channel; output power; power gain; power-added efficiency; pseudomorphic InP HEMT; substrate thickness; Fixtures; Frequency; Gain measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Power generation; Power measurement;
Journal_Title :
Electron Device Letters, IEEE
