Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI)

Author

Niu, Guofu ; Cressler, John D. ; Mathew, Suraj J. ; Ahlgren, David C.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

Volume

20

Issue

10

fYear

1999

Firstpage

520

Lastpage

522

Abstract

The subthreshold hump in the current-voltage (I-V) characteristics caused by the current-carrying corner in shallow-trench-isolated (STI) n-channel MOSFET´s is significantly enhanced at reduced temperatures. Numerical simulations show that the sensitivity of the corner channel´s threshold voltage to temperature is smaller than that of the center channel´s threshold voltage. This, together with the reduced subthreshold swing at low temperatures, contribute to an enhanced subthreshold hump, and is potentially important for emerging cryogenic applications.

Keywords

CMOS integrated circuits; MOSFET; cryogenic electronics; isolation technology; semiconductor device models; CMOS technology; center channel threshold voltage; corner channel threshold voltage; cryogenic applications; current-voltage characteristics; enhanced low-temperature corner current-carrying; n-channel MOSFET; numerical simulations; shallow trench isolation; subthreshold hump; subthreshold swing; CMOS technology; Cooling; Cryogenics; Length measurement; MOSFET circuits; Microelectronics; Random access memory; Temperature distribution; Temperature sensors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.791929

Filename

791929