• DocumentCode
    1555631
  • Title

    Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

  • Author

    Kuboyama, Satoshi ; Ikeda, Naomi ; Mizuta, Eiichi ; Abe, Hiroshi ; Hirao, Toshio ; Tamura, Takashi

  • Author_Institution
    Japan Aerospace Exploration Agency, Tsukuba, Ibaraki, Japan
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    749
  • Lastpage
    754
  • Abstract
    The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains a critical issue for devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was also proposed.
  • Keywords
    Electric breakdown; Ions; Logic gates; MOSFETs; Periodic structures; Radiation effects; Semiconductor device modeling; Heavy ions; power MOSFETs; radiation damage; single-event effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2201501
  • Filename
    6236262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1555631