Exploration of velocity overshoot in a high-performance deep sub-0.1-μm SOI MOSFET with asymmetric channel profile

Author

Baohong Cheng ; Rao, Valipe Ramgopal ; Woo, J.C.S.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

Volume

20

Issue

10

fYear

1999

Firstpage

538

Lastpage

540

Abstract

The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 μm. The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5×10⁶ cm/s for a device with L/sub eff/=0.08 μm at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.

Keywords

MOSFET; doping profiles; electron density; electron mobility; inversion layers; semiconductor device measurement; silicon-on-insulator; 0.08 mum; 300 K; SOI MOSFET; asymmetric channel profile; carrier density uniformity; channel length; electron drift velocity; electron velocity overshoot phenomenon; inversion layer; tangential field uniformity; thin-film SOI test structure; Charge carrier density; Charge carrier processes; Doping profiles; Electron mobility; Los Angeles Council; MOSFET circuits; Silicon on insulator technology; Testing; Threshold voltage; Velocity measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.791935

Filename

791935