Title :
Quantum confined Stark effect in GaInAs/InP single quantum wells grown by low pressure MOVPE
Author :
Moseley, A.J. ; Robbins, D.J. ; Kearley, M.Q. ; Davies, J.I.
Author_Institution :
Plessey Res. Caswell
fDate :
10/13/1988 12:00:00 AM
Abstract :
Reports the first measurements of the quantum confined Stark effect in single GaInAs/InP quantum wells using photocurrent spectra from a single 80 Å well. Well resolved excitonic features are observed for values of electric field up to 3×105 V/cm, whose field dependent shift and peak height are in excellent agreement with the predictions of an effective mass calculation, thus demonstrating that there are no intrinsic factors limiting the effect in the GaInAs/InP material system
Keywords :
III-V semiconductors; Stark effect; gallium arsenide; indium compounds; photoconductivity; semiconductor junctions; semiconductor superlattices; vapour phase epitaxial growth; 80 A; GaInAs-InP; III-V semiconductors; effective mass calculation; electric field; excitonic features; field dependent shift; intrinsic factors; low pressure MOVPE; peak height; photocurrent spectra; quantum confined Stark effect; single quantum wells;
Journal_Title :
Electronics Letters
