• DocumentCode
    1555776
  • Title

    1.3 μm InAsP/lnAlGaAs MQW lasers for high-temperature operation

  • Author

    Anan, T. ; Yamada, M. ; Tokutome, K. ; Sugou, S.

  • Author_Institution
    Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
  • Volume
    33
  • Issue
    12
  • fYear
    1997
  • fDate
    6/5/1997 12:00:00 AM
  • Firstpage
    1048
  • Lastpage
    1049
  • Abstract
    InAsP/lnAlGaAs strained multiquantum-well (MQW) 1.3 μm lasers with a large conduction band discontinuity are proposed and demonstrated for the first time. An InAsP/InAlGaAs MQW layer with high structural and optical quality was obtained by gas-source molecular beam epitaxy growth combined with post-growth 650°C rapid thermal annealing. The lasers exhibited a low threshold current density of 1.1 kA/cm2 with an excellent characteristic temperature as high as 116 K in the temperature range 25-85°C
  • Keywords
    III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; conduction bands; current density; gallium arsenide; indium compounds; laser transitions; optical fabrication; quantum well lasers; rapid thermal annealing; semiconductor growth; 1.3 micron; 25 to 85 C; 650 C; GSMBE growth; InAsP-InAlGaAs; MQW laser; RTA; conduction band discontinuity; gas-source MBE growth; high-temperature operation; molecular beam epitaxy growth; multiquantum-well lasers; rapid thermal annealing; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970671
  • Filename
    588431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1555776