Title :
Submilliamp 1.3 μm vertical-cavity surface-emitting lasers with threshold current density of <500A/cm2
Author :
Qian, Yi ; Zhu, Z.H. ; Lo, Y.H. ; Huffaker, D.L. ; Deppe, Dennis G. ; Hou, H.Q. ; Hammons, B.E. ; Lin, Weisi ; Tu, Y.K.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY
fDate :
6/5/1997 12:00:00 AM
Abstract :
High performance 1.3 μm vertical-cavity surface-emitting lasers (VCSELs) using oxygen implantation in wafer-bonded GaAs-AlGaAs mirrors are demonstrated. A record low threshold current density of 454 A/cm2 and a threshold current of 0.83 mA have been achieved for pulsed operation at 20°C. The maximum CW and pulsed operating temperatures are 40 and 112°C, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 0.83 mA; 1.3 micron; 20 to 112 C; AlGaInAs SC-MQW; AlGaInAs-InP; CW operation; GaAs-AlGaAs; O implantation; VCSEL; multiquantum well; pulsed operation; surface-emitting lasers; threshold current; threshold current density; vertical-cavity SEL; wafer-bonded GaAs-AlGaAs mirrors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970679
