Title :
A three dimensional semiconductor device simulator for GaAs/AlGaAs heterojunction bipolar transistor analysis
Author :
Chan, Hiang-Cheong ; Shieh, Tsay-Jiu
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA
fDate :
11/1/1991 12:00:00 AM
Abstract :
A three-dimensional semiconductor device simulator was developed to study the steady-state characteristics of heterostructure compound semiconductor devices. The semiconductor partial differential equations-Poisson´s equation and the two carrier transport equations-are solved using finite-difference discretization. The Gummel iteration method and indirect space matrix solution techniques are utilized for minimizing computation time and memory requirements. This simulator was applied to the analysis of heterojunction bipolar transistors. The effect of emitter grading on the current-voltage characteristic is demonstrated. A comparison between two- and three-dimensional simulations is also presented. The results show that three-dimensional analysis is indispensable, in particular for devices of small geometry
Keywords :
III-V semiconductors; aluminium compounds; electronic engineering computing; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAs-AlGaAs; Gummel iteration method; Poisson equation; carrier transport equations; current-voltage characteristic; emitter grading; finite-difference discretization; heterojunction bipolar transistor; indirect space matrix solution techniques; semiconductor partial differential equations; steady-state characteristics; three dimensional semiconductor device simulator; Analytical models; Computational modeling; Current-voltage characteristics; Differential equations; Finite difference methods; Gallium arsenide; Heterojunction bipolar transistors; Partial differential equations; Semiconductor devices; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
