DocumentCode :
1555824
Title :
Detailed balance efficiency limits with quasi-Fermi level variations [QW solar cell]
Author :
Bremner, Stephen P. ; Corkish, Richard ; Honsberg, Christiana B.
Author_Institution :
Photovoltaics Special Res. Centre, New South Wales Univ., Kensington, NSW, Australia
Volume :
46
Issue :
10
fYear :
1999
fDate :
10/1/1999 12:00:00 AM
Firstpage :
1932
Lastpage :
1939
Abstract :
A central assumption in detailed balance efficiency limit calculations has been that the light generated carriers are collected by drift transport processes and have an infinite mobility, giving rise to constant quasi-Fermi levels (RFLs) across the solar cell. However, recent experimental and theoretical results for quantum well (QW) devices indicate that the QFLs need not be constant across the device. It is shown in this paper that transport mechanisms which cause a variation in the difference between the electron and hole QFLs give an increase in the limiting efficiency compared to previous detailed balance calculations. Further, QW solar cells which employ hot carrier transport across a well will have an efficiency limit in excess of a tandem solar cell while using the same number of semiconductor materials
Keywords :
Fermi level; hot carriers; quantum well devices; semiconductor device models; semiconductor quantum wells; solar cells; GaAs; QW solar cell; detailed balance efficiency limits; drift transport processes; hot carrier transport; light generated carriers; quantum well devices; quasi-Fermi level variations; semiconductor materials; Absorption; Charge carrier processes; Hot carriers; Photonic band gap; Photonic crystals; Photovoltaic cells; Radiative recombination; Semiconductor materials; Solar power generation; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.791981
Filename :
791981
Link To Document :
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