DocumentCode
1555824
Title
Detailed balance efficiency limits with quasi-Fermi level variations [QW solar cell]
Author
Bremner, Stephen P. ; Corkish, Richard ; Honsberg, Christiana B.
Author_Institution
Photovoltaics Special Res. Centre, New South Wales Univ., Kensington, NSW, Australia
Volume
46
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
1932
Lastpage
1939
Abstract
A central assumption in detailed balance efficiency limit calculations has been that the light generated carriers are collected by drift transport processes and have an infinite mobility, giving rise to constant quasi-Fermi levels (RFLs) across the solar cell. However, recent experimental and theoretical results for quantum well (QW) devices indicate that the QFLs need not be constant across the device. It is shown in this paper that transport mechanisms which cause a variation in the difference between the electron and hole QFLs give an increase in the limiting efficiency compared to previous detailed balance calculations. Further, QW solar cells which employ hot carrier transport across a well will have an efficiency limit in excess of a tandem solar cell while using the same number of semiconductor materials
Keywords
Fermi level; hot carriers; quantum well devices; semiconductor device models; semiconductor quantum wells; solar cells; GaAs; QW solar cell; detailed balance efficiency limits; drift transport processes; hot carrier transport; light generated carriers; quantum well devices; quasi-Fermi level variations; semiconductor materials; Absorption; Charge carrier processes; Hot carriers; Photonic band gap; Photonic crystals; Photovoltaic cells; Radiative recombination; Semiconductor materials; Solar power generation; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.791981
Filename
791981
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