• DocumentCode
    1555824
  • Title

    Detailed balance efficiency limits with quasi-Fermi level variations [QW solar cell]

  • Author

    Bremner, Stephen P. ; Corkish, Richard ; Honsberg, Christiana B.

  • Author_Institution
    Photovoltaics Special Res. Centre, New South Wales Univ., Kensington, NSW, Australia
  • Volume
    46
  • Issue
    10
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    1932
  • Lastpage
    1939
  • Abstract
    A central assumption in detailed balance efficiency limit calculations has been that the light generated carriers are collected by drift transport processes and have an infinite mobility, giving rise to constant quasi-Fermi levels (RFLs) across the solar cell. However, recent experimental and theoretical results for quantum well (QW) devices indicate that the QFLs need not be constant across the device. It is shown in this paper that transport mechanisms which cause a variation in the difference between the electron and hole QFLs give an increase in the limiting efficiency compared to previous detailed balance calculations. Further, QW solar cells which employ hot carrier transport across a well will have an efficiency limit in excess of a tandem solar cell while using the same number of semiconductor materials
  • Keywords
    Fermi level; hot carriers; quantum well devices; semiconductor device models; semiconductor quantum wells; solar cells; GaAs; QW solar cell; detailed balance efficiency limits; drift transport processes; hot carrier transport; light generated carriers; quantum well devices; quasi-Fermi level variations; semiconductor materials; Absorption; Charge carrier processes; Hot carriers; Photonic band gap; Photonic crystals; Photovoltaic cells; Radiative recombination; Semiconductor materials; Solar power generation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.791981
  • Filename
    791981