• DocumentCode
    1555828
  • Title

    Very high efficiency silicon solar cells-science and technology

  • Author

    Green, Martin A. ; Zhao, Jianhua ; Wang, Aihua ; Wenham, Stuart R.

  • Author_Institution
    Photovoltaics Special Res. Centre, New South Wales Univ., Kensington, NSW, Australia
  • Volume
    46
  • Issue
    10
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    1940
  • Lastpage
    1947
  • Abstract
    Although it has been close to 60 years since the first operational silicon solar cell was demonstrated, the last 15 years have seen large improvements in the technology, with the best confirmed cell efficiency improved by over 50 %. The main drivers have been improved electrical and optical design of the cells. Improvements in the former area include improved passivation of contact and surface regions of the cells and a reduction in the volume of heavily doped material within the cell. Optically, reduced reflection and improved trapping of light within the cell have had a large impact. Such features have increased silicon cell efficiency to a recently confirmed value of 24.7%. Over recent years, good progress has been made in transferring some of the corresponding design improvements into commercial product with commercial cells of 17-18% efficiency now commercially available, record values of a mere 15 years ago. The theory supporting these improvements in bulk cell efficiency shows that thin layers of silicon, only a micron or so in thickness, should be capable of comparably high efficiency
  • Keywords
    elemental semiconductors; passivation; reviews; semiconductor technology; semiconductor thin films; silicon; solar cells; surface recombination; 17 to 24.7 percent; Si; Si solar cells; Si thin layers; cell efficiency; commercial cells; design improvements; heavily doped material; high efficiency solar cells; light trapping improvement; passivation; reflection reduction; Aluminum alloys; Energy conversion; Etching; Passivation; Photovoltaic cells; Silicon; Solar power generation; Space technology; Surface texture; Titanium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.791982
  • Filename
    791982