DocumentCode
1555828
Title
Very high efficiency silicon solar cells-science and technology
Author
Green, Martin A. ; Zhao, Jianhua ; Wang, Aihua ; Wenham, Stuart R.
Author_Institution
Photovoltaics Special Res. Centre, New South Wales Univ., Kensington, NSW, Australia
Volume
46
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
1940
Lastpage
1947
Abstract
Although it has been close to 60 years since the first operational silicon solar cell was demonstrated, the last 15 years have seen large improvements in the technology, with the best confirmed cell efficiency improved by over 50 %. The main drivers have been improved electrical and optical design of the cells. Improvements in the former area include improved passivation of contact and surface regions of the cells and a reduction in the volume of heavily doped material within the cell. Optically, reduced reflection and improved trapping of light within the cell have had a large impact. Such features have increased silicon cell efficiency to a recently confirmed value of 24.7%. Over recent years, good progress has been made in transferring some of the corresponding design improvements into commercial product with commercial cells of 17-18% efficiency now commercially available, record values of a mere 15 years ago. The theory supporting these improvements in bulk cell efficiency shows that thin layers of silicon, only a micron or so in thickness, should be capable of comparably high efficiency
Keywords
elemental semiconductors; passivation; reviews; semiconductor technology; semiconductor thin films; silicon; solar cells; surface recombination; 17 to 24.7 percent; Si; Si solar cells; Si thin layers; cell efficiency; commercial cells; design improvements; heavily doped material; high efficiency solar cells; light trapping improvement; passivation; reflection reduction; Aluminum alloys; Energy conversion; Etching; Passivation; Photovoltaic cells; Silicon; Solar power generation; Space technology; Surface texture; Titanium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.791982
Filename
791982
Link To Document