DocumentCode :
1555845
Title :
Design strategies for commercial solar cells using the buried contact technology
Author :
Honsberg, Christiana B. ; Cotter, Jeffrey E. ; McIntosh, Keith R. ; Pritchard, Stephen C. ; Richards, Bryce S. ; Wenham, Stuart R.
Author_Institution :
New South Wales Univ., Kensington, NSW, Australia
Volume :
46
Issue :
10
fYear :
1999
fDate :
10/1/1999 12:00:00 AM
Firstpage :
1984
Lastpage :
1992
Abstract :
The efficiency of commercial solar cells depends not only on the design and technology used to make the solar cell, but just as importantly on the minority carrier lifetime in the silicon wafer material. This paper presents a design strategy based on matching the efficiency potential of the silicon material to that of the silicon substrate in order to minimize the $/W cost of a solar cell. The flexibility of the buried contact technology allows this design strategy to be fully utilized and a range of buried contact solar cell structures can be developed, each suited to a particular type of commercial silicon substrate. The paper demonstrates that simplified buried contact solar cells are best suited to multicrystalline silicon material. Generation I buried contact solar cells are optimally matched to conventional Czochralski (CZ) substrates, and double-sided buried contact (DS BC) structures will allow the thinner, higher lifetime wafers to reach their full efficiency potential
Keywords :
carrier lifetime; elemental semiconductors; minority carriers; semiconductor device metallisation; silicon; solar cells; Czochralski substrates; Si; buried contact technology; efficiency potential; higher lifetime wafers; minority carrier lifetime; multicrystalline material; solar cells; Charge carrier lifetime; Costs; Crystallization; Helium; Photovoltaic cells; Sheet materials; Silicon; Solar power generation; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.791986
Filename :
791986
Link To Document :
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