• DocumentCode
    1555854
  • Title

    Low-cost back contact silicon solar cells

  • Author

    Kress, André ; Kühn, Ralph ; Fath, Peter ; Willeke, Gerhard P. ; Bucher, Ernst

  • Author_Institution
    Fak. fur Phys., Konstanz Univ., Germany
  • Volume
    46
  • Issue
    10
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    2000
  • Lastpage
    2004
  • Abstract
    Back-contacted solar cells offer multiple advantages in regard of reducing module assembling costs and avoiding grid shadowing losses. The investigated emitter-wrap-through (EWT) device design has an electrical connection of the front emitter and the rear emitter grid in form of small holes drilled into the crystalline silicon wafer. The obtained cell structure is especially suitable for low-cost base material with small minority carrier diffusion lengths. Different industrially applicable solar cell manufacturing processes for EWT devices are described and compared. The latest experimental results are presented and interpreted; the photocurrent is found to be distinctly increased. The relation between open circuit voltage and rear side passivation is discussed based on two-dimensional (2-D) computer simulations
  • Keywords
    diffusion; digital simulation; minority carriers; passivation; semiconductor device manufacture; semiconductor device models; solar cells; 2D computer simulations; back-contacted solar cells; emitter-wrap-through device; front emitter grid; low-cost base material; minority carrier diffusion lengths; module assembling costs; open circuit voltage; photocurrent; rear emitter grid; rear side passivation; solar cell manufacturing processes; Assembly; Contacts; Costs; Crystalline materials; Crystallization; Industrial relations; Manufacturing industries; Photovoltaic cells; Shadow mapping; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.791988
  • Filename
    791988