DocumentCode
1555854
Title
Low-cost back contact silicon solar cells
Author
Kress, André ; Kühn, Ralph ; Fath, Peter ; Willeke, Gerhard P. ; Bucher, Ernst
Author_Institution
Fak. fur Phys., Konstanz Univ., Germany
Volume
46
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
2000
Lastpage
2004
Abstract
Back-contacted solar cells offer multiple advantages in regard of reducing module assembling costs and avoiding grid shadowing losses. The investigated emitter-wrap-through (EWT) device design has an electrical connection of the front emitter and the rear emitter grid in form of small holes drilled into the crystalline silicon wafer. The obtained cell structure is especially suitable for low-cost base material with small minority carrier diffusion lengths. Different industrially applicable solar cell manufacturing processes for EWT devices are described and compared. The latest experimental results are presented and interpreted; the photocurrent is found to be distinctly increased. The relation between open circuit voltage and rear side passivation is discussed based on two-dimensional (2-D) computer simulations
Keywords
diffusion; digital simulation; minority carriers; passivation; semiconductor device manufacture; semiconductor device models; solar cells; 2D computer simulations; back-contacted solar cells; emitter-wrap-through device; front emitter grid; low-cost base material; minority carrier diffusion lengths; module assembling costs; open circuit voltage; photocurrent; rear emitter grid; rear side passivation; solar cell manufacturing processes; Assembly; Contacts; Costs; Crystalline materials; Crystallization; Industrial relations; Manufacturing industries; Photovoltaic cells; Shadow mapping; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.791988
Filename
791988
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