Title :
High performance 1.55 μm polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP
Author :
Emery, J.-Y. ; Ducellier, T. ; Bachmann, Michael ; Doussiere, P. ; Pommereau, Franck ; Ngo, R. ; Gaborit, F. ; Goldstein, L. ; Laube, G. ; Barrau, J.
Author_Institution :
Corp. Res. Center, Alcatel Alsthom Recherche, Marcoussis
fDate :
6/5/1997 12:00:00 AM
Abstract :
High performance, polarisation-independent semiconductor optical amplifier based on low-tensile-strained separate confinement heterostructures and integrated with a double core taper have been realised. Fibre-to-fibre gain as large as 29 dB, with TE-TM polarisation sensitivity as low as 0.3 dB and an output saturation power of ~9 dBm are currently achieved
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; 1.55 micron; 29 dB; GaInAsP; TE-TM polarisation sensitivity; double core taper; fibre-to-fibre gain; low-tensile-strained bulk GaInAsP; output saturation power; polarisation-insensitive semiconductor optical amplifier; separate confinement heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970703
