Title :
High-gain lateral bipolar action in a MOSFET structure
Author :
Verdonckt-Vandebroek, Sophie ; Wong, S. Simon ; Woo, Jason C S ; Ko, Ping K.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
11/1/1991 12:00:00 AM
Abstract :
A hybrid-mode device based on a standard submicrometer CMOS technology is presented. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral bipolar junction transistor (BJT). At low collector current levels, lateral bipolar action with a current gain higher than 1000 is achieved. No additional processing steps are needed to obtain the BJT when the MOSFET is properly designed. n-p-n BJTs with a 0.25-μm base width have been successfully fabricated in a p-well 0.25-μm bulk n-MOSFET process. The electrical characteristics of the n-MOSFET and the lateral n-p-n BJT at room and liquid nitrogen temperatures are reported
Keywords :
BIMOS integrated circuits; bipolar transistors; insulated gate field effect transistors; integrated circuit technology; 0.25 micron; MOSFET structure; electrical characteristics; high gain lateral bipolar action; hybrid-mode device; lateral bipolar junction transistor; low collector current levels; n-p-n BJTs; submicrometer CMOS technology; BiCMOS integrated circuits; CMOS process; CMOS technology; Electric variables; MOSFET circuits; Nitrogen; Power dissipation; Substrates; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
