DocumentCode
1555875
Title
High power 630 nm band laser diodes with strain-compensated single quantum well active layer
Author
Hiroyama, R. ; Uetani, T. ; Bessho, Y. ; Shone, M. ; Sawada, Masanori ; Ibaraki, A.
Author_Institution
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Volume
33
Issue
12
fYear
1997
fDate
6/5/1997 12:00:00 AM
Firstpage
1084
Lastpage
1086
Abstract
High power 630 nm band AlGaInP laser diodes with a strain-compensated single quantum well active layer have been successfully fabricated. The highest output power achieved was 72 mW. High power operation of 30 mW was obtained at up to 75°C; reliable operation was achieved for more than 1000 h under 30 mW at 50°C
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; 1000 h; 30 muW to 72 mW; 50 to 75 C; 630 nm; AlGaInP; high power laser diode; strain-compensated single quantum well active layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970721
Filename
588455
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