Title :
High voltage P+ polysilicon/N-6H-SiC heterojunction diodes
Author :
Shenoy, P.M. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
6/5/1997 12:00:00 AM
Abstract :
A novel P+ polysilicon/N 6H-SiC heterojunction diode is reported which combines the advantages of both Schottky barrier diodes and pn junction diodes. The unterminated heterojunction diodes have excellent rectification characteristics and a high breakdown voltage of 220 V. The forward voltage drop measured at 100 A/cm2 is 2.7 V, close to the calculated value of 2.4 V. The suitability of this device for high speed switching applications was experimentally confirmed using reverse recovery measurements
Keywords :
power semiconductor diodes; rectification; semiconductor materials; silicon compounds; 220 V; Si-SiC; breakdown voltage; forward voltage drop; high speed switching; high voltage P+ polysilicon/N-6H-SiC heterojunction diode; rectification; reverse recovery;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970678
