Title :
High-temperature CVD for crystalline-silicon thin-film solar cells
Author :
Faller, Frank R. ; Hurrle, Albert
Author_Institution :
Fraunhofer Inst. for Solar Energysyst., Freiburg, Germany
fDate :
10/1/1999 12:00:00 AM
Abstract :
The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that we have constructed and characterized. Our system fulfils basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of our system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement
Keywords :
chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; 17.6 percent; 8 percent; Si; crystalline silicon thin film solar cell; epitaxial layer; high temperature deposition; thermal CVD; yield; Chemical vapor deposition; Crystallization; Inductors; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
