Title :
Low threshold compressively strained InGaAs/lnGaAsP quantum well distributed feedback laser at 1.95 μm
Author :
Dong, Junchen ; Ubukata, A. ; Matsumoto, Kaname
Author_Institution :
Tsukuba Lab., Nippon Sanso Corp., Ibaraki
fDate :
6/5/1997 12:00:00 AM
Abstract :
The lowest threshold operation of a strained InGaAs/InGaAsP quantum well distributed feedback laser is demonstrated at 1.95 μm, fabricated by low pressure metal organic chemical vapour deposition. The threshold current was 4 mA at 10°C. Single-mode operation was observed over the range 10-40°C. A maximum output power of 7.2 mW was obtained, in addition to an external differential quantum efficiency of 15.9%, a characteristic temperature of 34 K and a side mode suppression ratio of 33.7 dB
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; quantum well lasers; vapour phase epitaxial growth; 1.95 micron; 10 to 40 C; 15.9 percent; 4 mA; 7.2 mW; DFB laser; InGaAs-InGaAsP; LP-MOCVD; compressively strained quantum well; distributed feedback laser; low pressure MOCVD; low threshold operation; metal organic CVD; semiconductor laser; single-mode operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970707
