Title :
Microwave noise characteristics of AlSb/InAs HEMTs
Author :
Kruppa, W. ; Boos, J. Brad ; Park, DaeLim ; Bennett, Brian R. ; Bass, R.
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
6/5/1997 12:00:00 AM
Abstract :
The microwave noise characteristics of AlSb/InAs HEMTs are reported for the first time. Although the noise performance is presently limited by the gate leakage current, a minimum noise figure of 1 dB at 4 GHz was measured. Simulations based on these measurements indicate that very low noise performance is achievable at drain voltages <0.5 V
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; semiconductor device noise; 0.5 V; 1 dB; 4 GHz; AlSb-InAs; AlSb-InAs HEMTs; SHF; gate leakage current; low noise performance; microwave noise characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970691
