Title :
Threshold reduction of p-type δ-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon
Author :
Hatori, Nobuaki ; Mizutani, Akihiko ; Nishiyama, Naoto ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama
fDate :
6/5/1997 12:00:00 AM
Abstract :
An InGaAs/GaAs quantum well laser using p-type δ-doping selectively in the barriers has been demonstrated to reduce the threshold current and carrier lifetime. A δ-doping technique is proposed, based on the experimental evidence of high density carbon inclusion during AlAs growth by metal organic chemical vapour deposition (MOCVD). A threshold current density as low as 160 A/cm2 (54 A/cm2/well), has been obtained for three quantum well stripe lasers grown at 1.7×1018 cm-1 carbon doping
Keywords :
III-V semiconductors; carbon; carrier lifetime; current density; doping profiles; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor doping; vapour phase epitaxial growth; δ-doping technique; AlAs:C; C auto-doping; InGaAs-GaAs; InGaAs/GaAs quantum well lasers; MOCVD; carrier lifetime reduction; chemical vapour deposition; metal organic CVD; p-type δ-doped QW lasers; quantum well lasers; semiconductor lasers; stripe lasers; threshold current density; threshold current reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970710
