Threshold reduction of p-type δ-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon

Author

Hatori, Nobuaki ; Mizutani, Akihiko ; Nishiyama, Naoto ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama

Volume

33

Issue

12

fYear

1997

fDate

6/5/1997 12:00:00 AM

Firstpage

1096

Lastpage

1097

Abstract

An InGaAs/GaAs quantum well laser using p-type δ-doping selectively in the barriers has been demonstrated to reduce the threshold current and carrier lifetime. A δ-doping technique is proposed, based on the experimental evidence of high density carbon inclusion during AlAs growth by metal organic chemical vapour deposition (MOCVD). A threshold current density as low as 160 A/cm² (54 A/cm²/well), has been obtained for three quantum well stripe lasers grown at 1.7×10¹⁸ cm^-1 carbon doping

Keywords

III-V semiconductors; carbon; carrier lifetime; current density; doping profiles; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor doping; vapour phase epitaxial growth; δ-doping technique; AlAs:C; C auto-doping; InGaAs-GaAs; InGaAs/GaAs quantum well lasers; MOCVD; carrier lifetime reduction; chemical vapour deposition; metal organic CVD; p-type δ-doped QW lasers; quantum well lasers; semiconductor lasers; stripe lasers; threshold current density; threshold current reduction;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19970710

Filename

588463