DocumentCode :
1555911
Title :
Wet thermal oxidation of AlAsSb against As/Sb ratio
Author :
Blum, Oliver ; Hafich, M.J. ; Klem, John F.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Volume :
33
Issue :
12
fYear :
1997
fDate :
6/5/1997 12:00:00 AM
Firstpage :
1097
Lastpage :
1099
Abstract :
The authors describe lateral steam oxidation of the AlAsSb material system, varying the As/Sb ratio. Large oxidation depths are obtained for a variety of As/Sb ratios, as long as both As and Sb are present. In comparison, oxidation of AlAs is much slower, whereas AlSb does not appear to oxidise at all. Qualitatively different oxides are obtained from AlAs0.56Sb0.44 AlAs0.16Sb 0.84
Keywords :
III-V semiconductors; aluminium compounds; oxidation; semiconductor technology; AlAs0.16Sb0.84; AlAs0.56Sb0.44; AlAsSb; AlAsSb material system; As/Sb ratio variation; lateral steam oxidation; wet thermal oxidation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970684
Filename :
588464
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1555911
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