• DocumentCode
    1555911
  • Title

    Wet thermal oxidation of AlAsSb against As/Sb ratio

  • Author

    Blum, Oliver ; Hafich, M.J. ; Klem, John F.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM
  • Volume
    33
  • Issue
    12
  • fYear
    1997
  • fDate
    6/5/1997 12:00:00 AM
  • Firstpage
    1097
  • Lastpage
    1099
  • Abstract
    The authors describe lateral steam oxidation of the AlAsSb material system, varying the As/Sb ratio. Large oxidation depths are obtained for a variety of As/Sb ratios, as long as both As and Sb are present. In comparison, oxidation of AlAs is much slower, whereas AlSb does not appear to oxidise at all. Qualitatively different oxides are obtained from AlAs0.56Sb0.44 AlAs0.16Sb 0.84
  • Keywords
    III-V semiconductors; aluminium compounds; oxidation; semiconductor technology; AlAs0.16Sb0.84; AlAs0.56Sb0.44; AlAsSb; AlAsSb material system; As/Sb ratio variation; lateral steam oxidation; wet thermal oxidation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970684
  • Filename
    588464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1555911