DocumentCode :
1555941
Title :
Progress and future view of silicon space solar cells in Japan
Author :
Suzuki, Akio ; Kaneiwa, Minoru ; Saga, Tatsuo ; Matsuda, Sumio
Author_Institution :
Sharp Corp., Nara, Japan
Volume :
46
Issue :
10
fYear :
1999
fDate :
10/1/1999 12:00:00 AM
Firstpage :
2126
Lastpage :
2132
Abstract :
The progress and the future view of silicon (Si) space solar cells in Japan are reviewed. In 1991, two types of the high-efficiency silicon (HES) cell were developed: (1) NRS/LBSF cell; (2) NRS/BSF cell. The former shows a conversion efficiency of 18.0% (AM0, 28°C) at beginning-of-life (BOL), the latter shows superior radiation tolerance. In 1998, the radiation tolerance of the NRS/BSF cell was improved; moreover, the advanced high-efficiency silicon-1 (AHES-1) cell was accomplished. It shows 13.1% at end-of-life (EOL). The development has progressed to make the 13.7% EOL cell: AHES-2 cell. In 1994, the integrated bypass function (IBF), which prevents failures due to reverse biasing of cells, was proposed. The NRS/BSF cells with IBF have been used already on several satellites. The structures, performance, and radiation tolerances of these cells are introduced. New approaches for further improvement are proposed
Keywords :
elemental semiconductors; reviews; silicon; solar cells; space vehicle power plants; technological forecasting; 13.1 percent; 13.7 percent; 18 percent; 28 C; AHES-1 cell; AM0 conversion efficiency; Japan; NRS/BSF cell; NRS/LBSF cell; Si; Si space solar cells; advanced high-efficiency silicon-1 cell; beginning-of-life; end-of-life; high-efficiency silicon cell; integrated bypass function; radiation tolerance; satellites; Europe; Gallium arsenide; History; Ionosphere; Laboratories; Photovoltaic cells; Satellites; Silicon; Space technology; Telephony;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.792007
Filename :
792007
Link To Document :
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