Distributed-feedback quantum cascade lasers emitting in the 9-μm band with InP top cladding layers

Author

Hofstetter, D. ; Beck, M. ; Aellen, T. ; Faist, M. ; Oesterle, U. ; Ilegems, M. ; Gini, E. ; Melchior, H.

Author_Institution

Inst. de Phys., Neuchatel Univ., Switzerland

Volume

14

Issue

1

fYear

2002

Firstpage

18

Lastpage

20

Abstract

Two different high performance quantum cascade distributed-feedback lasers with four quantum-well-based active regions and InP top cladding layers are presented. The first device, which emitted at 9.5 μm, was mounted junction down in order to get high average powers of up to 71 mW at -30/spl deg/C and 30 mW at room temperature. The other device, which lased at 9.1 μm, was optimized for high pulsed operating temperatures and tested up to 150/spl deg/C at 1.5% duty cycle. The emission of both lasers stayed single mode with more than 20-dB side-mode suppression ratio over the entire investigated power and temperature range.

Keywords

III-V semiconductors; claddings; distributed feedback lasers; indium compounds; quantum well lasers; semiconductor device packaging; semiconductor device testing; -30 C; 150 C; 20 C; 30 mW; 71 mW; 9 micron; 9.1 micron; 9.5 micron; InP; InP top cladding layers; average powers; distributed-feedback quantum cascade lasers; duty cycle; junction down mounting; lasing wavelength; power range; pulsed operating temperatures; quantum cascade distributed-feedback lasers; quantum-well-based active regions; side-mode suppression ratio; single mode emission; temperature range; Distributed feedback devices; Gratings; Indium phosphide; Laser feedback; Laser tuning; Power lasers; Quantum cascade lasers; Spectroscopy; Surface emitting lasers; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.974147

Filename

974147