Title :
Distributed-feedback quantum cascade lasers emitting in the 9-μm band with InP top cladding layers
Author :
Hofstetter, D. ; Beck, M. ; Aellen, T. ; Faist, M. ; Oesterle, U. ; Ilegems, M. ; Gini, E. ; Melchior, H.
Author_Institution :
Inst. de Phys., Neuchatel Univ., Switzerland
Abstract :
Two different high performance quantum cascade distributed-feedback lasers with four quantum-well-based active regions and InP top cladding layers are presented. The first device, which emitted at 9.5 μm, was mounted junction down in order to get high average powers of up to 71 mW at -30/spl deg/C and 30 mW at room temperature. The other device, which lased at 9.1 μm, was optimized for high pulsed operating temperatures and tested up to 150/spl deg/C at 1.5% duty cycle. The emission of both lasers stayed single mode with more than 20-dB side-mode suppression ratio over the entire investigated power and temperature range.
Keywords :
III-V semiconductors; claddings; distributed feedback lasers; indium compounds; quantum well lasers; semiconductor device packaging; semiconductor device testing; -30 C; 150 C; 20 C; 30 mW; 71 mW; 9 micron; 9.1 micron; 9.5 micron; InP; InP top cladding layers; average powers; distributed-feedback quantum cascade lasers; duty cycle; junction down mounting; lasing wavelength; power range; pulsed operating temperatures; quantum cascade distributed-feedback lasers; quantum-well-based active regions; side-mode suppression ratio; single mode emission; temperature range; Distributed feedback devices; Gratings; Indium phosphide; Laser feedback; Laser tuning; Power lasers; Quantum cascade lasers; Spectroscopy; Surface emitting lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
