DocumentCode
1556068
Title
Temperature dependence of electrical and optical modulation responses of quantum-well lasers
Author
Keating, T. ; Jin, X. ; Chuang, S.L. ; Hess, K.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
35
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
1526
Lastpage
1534
Abstract
We present theory and experiment for high-speed optical injection in the absorption region of a quantum-well laser and compare the results with those of electrical injection including the carrier transport effect. We show that the main difference between the two responses is the low-frequency roll-off. By using both injection methods, we obtain more accurate and consistent measurements of many important dynamic laser parameters, including the differential gain, carrier lifetime, K factor, and gain compression factor. Temperature-dependent data of the test laser are presented which show that the most dominant effect is the linear degradation of differential gain and injection efficiency with increasing temperature. While the K-factor is insensitive to temperature variation for multiple-quantum-well lasers, we find that the carrier capture time and nonlinear gain suppression coefficient decreases as temperature increases
Keywords
carrier lifetime; distributed feedback lasers; electro-optical modulation; high-speed optical techniques; optical modulation; quantum well lasers; 1.55 mum; K factor; MQW DFB lasers; absorption region; carrier capture time; carrier lifetime; carrier transport effect; differential gain; dynamic laser parameters; electrical injection; electrical modulation response; gain compression factor; high-speed optical injection; injection efficiency; linear degradation; low-frequency roll-off; nonlinear gain suppression coefficient; optical modulation response; quantum-well lasers; temperature dependence; Absorption; Charge carrier lifetime; Degradation; Gain measurement; High speed optical techniques; Nonlinear optics; Optical modulation; Quantum well lasers; Temperature dependence; Testing;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.792589
Filename
792589
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