Title :
Pre-turn-on source bipolar injection in graded NMOSTs
Author :
Jankovic, Nebojsa D.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Yugoslavia
fDate :
11/1/1991 12:00:00 AM
Abstract :
The influence of the pre-turn-on source bipolar injection on graded NMOST breakdown characteristics is investigated. Double-implanted As-P (n+n-) source-drain NMOS structures (DD NMOSTs) with different effective channel lengths, ranging from 1.15 to 9.15 μm, are measured. Using a simple, but accurate, semi-empirical model for the transistor operating in the breakdown region, it is shown that the DD NMOST snapback voltage is substantially decreased due to the enhanced pre-turn-on source electron emission current
Keywords :
electric breakdown of solids; electron emission; insulated gate field effect transistors; semiconductor device models; 1.15 to 9.15 micron; Si:As,P; breakdown characteristics; double implanted structure; effective channel lengths; electron emission current; graded NMOST; model; preturnon injection; snapback voltage; source bipolar injection; source-drain NMOS structures; Breakdown voltage; CMOS technology; Diodes; Electric breakdown; Electrons; Length measurement; MOS devices; Predictive models; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
