• DocumentCode
    1556104
  • Title

    Pre-turn-on source bipolar injection in graded NMOSTs

  • Author

    Jankovic, Nebojsa D.

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Yugoslavia
  • Volume
    38
  • Issue
    11
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    2527
  • Lastpage
    2530
  • Abstract
    The influence of the pre-turn-on source bipolar injection on graded NMOST breakdown characteristics is investigated. Double-implanted As-P (n+n-) source-drain NMOS structures (DD NMOSTs) with different effective channel lengths, ranging from 1.15 to 9.15 μm, are measured. Using a simple, but accurate, semi-empirical model for the transistor operating in the breakdown region, it is shown that the DD NMOST snapback voltage is substantially decreased due to the enhanced pre-turn-on source electron emission current
  • Keywords
    electric breakdown of solids; electron emission; insulated gate field effect transistors; semiconductor device models; 1.15 to 9.15 micron; Si:As,P; breakdown characteristics; double implanted structure; effective channel lengths; electron emission current; graded NMOST; model; preturnon injection; snapback voltage; source bipolar injection; source-drain NMOS structures; Breakdown voltage; CMOS technology; Diodes; Electric breakdown; Electrons; Length measurement; MOS devices; Predictive models; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.97418
  • Filename
    97418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1556104