Title :
Ferroelectric nonvolatile memory technology: applications and integration challenges
Author :
Zurcher, Peter ; Jones, Robert E. ; Chu, Peir Y. ; Taylor, Deborah J. ; White, Bruce E., Jr. ; Zafar, Sufi ; Jiang, Bo ; Lii, Yeong-Jyh Tom ; Gillespie, Sherry J.
Author_Institution :
Motorola Inc., Austin, TX, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
Challenges in the integration of ferroelectric nonvolatile memories with complementary metal-oxide-semiconductor (CMOS) technology for low-voltage and low-power applications are discussed. The main driving force for commercialization is to take advantage of the true high-speed (100 ns), low-voltage (0.9 V) write potential of ferroelectric memories. The operation of ferroelectric nonvolatile memories and different integration approaches are discussed. Specifically, the effort in integrating SrBi2Ta2O 9 ferroelectrics with CMOS is reviewed. For the first time, ferroelectric capacitor and CMOS transistor properties after integration through metallization are presented
Keywords :
CMOS memory circuits; bismuth compounds; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; strontium compounds; 0.9 V; 100 ns; CMOS technology; SrBi2Ta2O9; ferroelectric capacitor; ferroelectric nonvolatile memory; integration approaches; low-voltage write potential; CMOS technology; Capacitors; Costs; EPROM; Ferroelectric materials; Material storage; Nonvolatile memory; Random access memory; Smart cards; Voltage;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
