DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization

Author

Samelis, Apostolos ; Pavlidis, Dimitris

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

45

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

886

Lastpage

897

Abstract

A new heterojunction bipolar transistor (HBT) small-signal equivalent-circuit parameter-extraction procedure employing multibias S-parameter data is presented. The algorithm combines analytical and empirical parameter evaluation techniques and results in a bias-dependent HBT model. To minimize the risk of nonphysical parameter estimation, elements such as the DC transport factor, α_o, and the emitter-base conductance are evaluated from the device DC characteristics, and the frequency dispersion of α is related to the RC time-constant of the emitter-base junction. Moreover, initial values for the extrinsic device parasitics are obtained from “hot” as well as “cold” S-parameter data. The method results in excellent fit between measured and modeled S-parameter data in the frequency range DC-40 GHz and for a wide range of bias operating points

Keywords

S-parameters; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; optimisation; parameter estimation; semiconductor device models; 0 to 40 GHz; DC to HF model parameter evaluation; DC transport factor; HBT model parameter evaluation; RC time-constant; bias operating points; bias-dependent HBT model; emitter-base conductance; emitter-base junction; extrinsic device parasitics; heterojunction bipolar transistor; impedance block conditioned optimization; multibias S-parameter data; parameter estimation; parameter-extraction procedure; small-signal equivalent-circuit; Algorithm design and analysis; Frequency; Hafnium; Heterojunction bipolar transistors; Impedance; Laboratories; Parameter estimation; Parasitic capacitance; Power system modeling; Solid state circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.588596

Filename

588596