Title :
1/f noise in GaAs filaments
Author :
Tacano, Munecazu ; Sugiyama, Yoshinobu
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
11/1/1991 12:00:00 AM
Abstract :
A typical 1/f noise is excited in GaAs filament with the Hooge noise parameter of about αH=2×10-3 . The noise level increases in proportion to the square of the terminal voltage, and decreases approximately in inverse proportion to the total number of carriers within the device. A transition from the typical 1/f noise characteristics to the diffusion noise characteristics of MESFETs was observed when the electric field was increased above 1 kV/cm. The noise parameters were also investigated as a function of the device width between 2 and 200 μm. Deep levels within the n-GaAs active layer and the high electric field are the main factors of the nonideal 1/f characteristics
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; electron device noise; gallium arsenide; random noise; 1/f noise; 2 to 200 micron; GaAs filaments; Hooge noise parameter; MESFETs; deep levels; device width; diffusion noise characteristics; high electric field; n-type active layer; nonideal 1/f characteristics; terminal voltage; Electron devices; Frequency; Gallium arsenide; Gold; Helium; Low-frequency noise; MESFETs; Noise level; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
