Title :
Correlation between electrical resistance and microstructure in gold wirebonds on aluminum films
Author :
Maiocco, Lisa ; Smyers, Donna ; Munroe, Paul R. ; Baker, Ian
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
fDate :
9/1/1990 12:00:00 AM
Abstract :
Gold ball bonds attached to either pure Al films or Al films with Cu and Si additions were annealed at temperatures in the range 77-277°C for periods of up to 3000 h. Electrical resistance of the bonds was measured to within ±1 mΩ using a manual four-probe arrangement with an applied current of up to 100 mA. Nonlinear multiple regression analysis of the data produced an empirical model for the resistance increase up to 8 mΩ. The resistance increases are related to the intermetallic phases and void configurations observed
Keywords :
aluminium; aluminium alloys; annealing; copper alloys; electric resistance measurement; gold; lead bonding; metallic thin films; metallisation; silicon alloys; 100 mA; 3000 h; 77 to 277 degC; Au-Al; Au-AlCuSi; Si; annealing; applied current; electrical resistance; empirical model; four-probe arrangement; gold wirebonds; intermetallic phases; microstructure; nonlinear multiple regression analysis; void configurations; Annealing; Current measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gold; Microstructure; Regression analysis; Semiconductor films; Temperature distribution;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
