• DocumentCode
    1556499
  • Title

    An approximate analytical formulation of the intrinsic base resistance in two planar dimensions

  • Author

    Hook, Terence B.

  • Author_Institution
    IBM Gen. Technol. Div., Essex Junction, VT, USA
  • Volume
    38
  • Issue
    11
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    2569
  • Lastpage
    2570
  • Abstract
    The author demonstrates the accuracy of an approximate analytical model for the current-dependent base resistance for a two-dimensional rectangular emitter with various boundary conditions. This model is based on the analytical formulation of the one-dimensional case, with the conductance parameters empirically modified to represent two-dimensional current flow. The results of this model are compared directly to a finite-element model and the error is shown to be small for a wide range of emitter aspect ratios
  • Keywords
    bipolar transistors; electric resistance; semiconductor device models; 2D current flow; boundary conditions; conductance parameters; current-dependent base resistance; model; two-dimensional rectangular emitter; Boundary conditions; Circuit simulation; Equations; Finite element methods; Geometry; Power dissipation; SPICE; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.97427
  • Filename
    97427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1556499