Title :
Impact ionization phenomena in AlGaAs/GaAs HEMTs
Author :
Canali, C. ; Paccagnella, A. ; Pisoni, P. ; Tedesco, C. ; Telaroli, P. ; Zanoni, E.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
fDate :
11/1/1991 12:00:00 AM
Abstract :
The impact ionization current in AlGaAs/GaAs high-electron-mobility-transistors (HEMTs) is evaluated by means of measurements of the gate current and high drain voltages. A previously reported method to calculate impact ionization coefficient in GaAs MESFETs is extended to HEMTs. Results agree with the hypothesis that impact ionization takes place nearly exclusively in GaAs, and closely follow previously reported data for the electron impact ionization coefficient in ⟨110⟩ GaAs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; AlGaAs-GaAs; HEMTs; drain voltages; gate current; high-electron-mobility-transistors; impact ionization current; Breakdown voltage; Current measurement; Electric breakdown; Gallium arsenide; HEMTs; Impact ionization; Irrigation; MESFETs; MODFETs; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
