Comment on "Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET

For the original article see ibid., vol.37, no.1, p.2-10 (1990). In an attempt to investigate the effect of radiation and surface recombination on an ion implanted GaAs MESFET, S. Mishra et al., the authors of the above-titled paper, developed a closed-form analytical model of the device under illuminated condition. It is argued by the commenter that an incorrect I-V relation of the device in the illuminated condition was derived and that, therefore, the I-V relation obtained by the authors is incorrect. It is also suggested that a true I-V relation of the device in the illuminated condition can only be obtained after expressing the total charge explicitly as a function of channel voltage.<>