DocumentCode
1556744
Title
Oxidation of RuAl and NiAl Thin Films: Evolution of Surface Morphology and Electrical Resistance
Author
Howell, Jane A. ; Muhlstein, Christopher L. ; Liu, B.Z. ; Zhang, Q. ; Mohney, Suzanne E.
Author_Institution
Dept. of Mater. Sci. & Eng. & Mater. Res. Inst., Pennsylvania State Univ., University Park, PA, USA
Volume
20
Issue
4
fYear
2011
Firstpage
933
Lastpage
942
Abstract
RuAl and NiAl thin films on SiO2/Si were oxidized, and the results were compared to those from aluminum, ruthenium, and nickel films. Both aluminides are more oxidation resistant than nickel, aluminum, and ruthenium, and they form an outer layer of alumina after oxidation to 850 °C. The depth profiles differ for NiAl and RuAl, with alternating layers of alumina and a Ru-rich phase forming on RuAl, while a more complex structure forms on NiAl due to reaction with the substrate. The surface of RuAl after oxidation remains fairly smooth and reflective, whereas NiAl has a hazy appearance. However, the surface morphology changes at a slightly lower temperature in the case of RuAl (~ 500°C) . Both films remain conductive even after the surface begins to show signs of oxidation, with the NiAl remaining conductive to a higher temperature (after 1 h at 850 °C) than RuAl. The results show that NiAl and RuAl films can be used in an oxidizing atmosphere up to ~ 500°C (at least 1 h) for applications requiring a smooth reflective surface and to higher temperatures when the surface quality is less important but conductivity needs to be maintained (~ 800°C for RuAl and ~ 850°C for NiAl).
Keywords
aluminium alloys; electrical resistivity; metallic thin films; nickel alloys; oxidation; ruthenium alloys; surface morphology; NiAl; Ru-rich phase; RuAl; aluminides; aluminum film; electrical resistance; nickel film; oxidation; ruthenium film; surface morphology; temperature 850 degC; thin films; time 1 h; Annealing; Morphology; Nickel; Oxidation; Resistance; Silicon; Surface morphology; Aluminide; NiAl; RuAl; intermetallic; oxidation;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2011.2148156
Filename
5887373
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