DocumentCode
1556781
Title
Understanding Overreset Transition in Phase-Change Memory Characteristics
Author
Calderoni, A. ; Ferro, M. ; Varesi, E. ; Fantini, P. ; Rizzi, M. ; Ielmini, D.
Author_Institution
R&D Technol. Dev., Micron Technol., Inc., Agrate Brianza, Italy
Volume
33
Issue
9
fYear
2012
Firstpage
1267
Lastpage
1269
Abstract
In a phase-change memory (PCM), the overreset phenomenon, namely, the resistance decrease at pulse amplitudes well beyond the reset current, may affect the resistance window and the device noise margin. We characterized overreset states in PCM devices by electrical testing and electron microscopy. Our analysis shows that overreset programmed cell presents changes in the electronic band structure of the amorphous phase, with no degradation in the programmed amorphous volume.
Keywords
electron microscopy; phase change memories; PCM devices; amorphous phase; electrical testing; electron microscopy; electronic band structure; noise margin; overreset programmed cell; overreset transition; phase-change memory characteristics; programmed amorphous volume; pulse amplitudes; reset current; Conductivity; Current measurement; IP networks; Phase change materials; Phase change memory; Programming; Resistance; Chalcogenide glass; nonvolatile memory; phase-change memory (PCM); threshold switching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2202368
Filename
6238298
Link To Document