• DocumentCode
    1557013
  • Title

    TSV Stress-Aware Full-Chip Mechanical Reliability Analysis and Optimization for 3-D IC

  • Author

    Jung, Moongon ; Mitra, Joydeep ; Pan, David Z. ; Lim, Sung Kyu

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    31
  • Issue
    8
  • fYear
    2012
  • Firstpage
    1194
  • Lastpage
    1207
  • Abstract
    In this paper, we propose an efficient and accurate full-chip thermomechanical stress and reliability analysis tool and design optimization methodology to alleviate mechanical reliability issues in 3-D integrated circuits (ICs). First, we analyze detailed thermomechanical stress induced by through-silicon vias in conjunction with various associated structures such as landing pad and dielectric liner. Then, we explore and validate the linear superposition principle of stress tensors and demonstrate the accuracy of this method against detailed finite element analysis simulations. Next, we apply this linear superposition method to full-chip stress simulation and a reliability metric named the von Mises yield criterion. Finally, we propose a design optimization methodology to mitigate the mechanical reliability problems in 3-D ICs. Our numerical experimental results demonstrate the effectiveness of the proposed methodology.
  • Keywords
    finite element analysis; integrated circuit reliability; optimisation; tensors; thermomechanical treatment; three-dimensional integrated circuits; 3D IC; TSV stress-aware full-chip mechanical reliability analysis; TSV stress-aware full-chip mechanical reliability optimization; dielectric liner; finite element analysis simulations; full-chip thermomechanical reliability analysis tool; full-chip thermomechanical stress; landing pad; linear superposition method; linear superposition principle; mechanical reliability problem mitigation; optimization methodology; stress tensors; three-dimensional integrated circuits; through-silicon vias; von Mises yield criterion; Reliability; Silicon; Stress; Thermomechanical processes; Through-silicon vias; Young´s modulus; 3-D IC; mechanical reliability; stress; through-silicon via (TSV);
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2012.2188400
  • Filename
    6238396