Title :
A CMOS bandgap reference without resistors
Author :
Buck, Arne E. ; McDonald, Charles L. ; Lewis, Stephen H. ; Viswanathan, T.R.
Author_Institution :
Univ. of California, Lexington, MA, USA
fDate :
1/1/2002 12:00:00 AM
Abstract :
This paper describes a bandgap reference fabricated in a 0.5-μm digital CMOS technology without resistors. The circuit uses ratioed transistors biased in strong inversion together with the inverse-function technique to produce a temperature-insensitive gain applied to the proportional to absolute temperature (PTAT) term in the reference. After trimming, the peak-to-peak output voltage change is 9.4 mV from 0°C to 70°C. It occupies 0.4 mm2 and dissipates 1.4 mW from a 3.7-V supply
Keywords :
CMOS analogue integrated circuits; energy gap; reference circuits; 0 to 70 C; 0.5 micron; 1.4 mW; 3.7 V; CMOS bandgap reference circuit; inverse function; peak-to-peak output voltage; proportional to absolute temperature; ratioed transistors; temperature-insensitive gain; trimming; CMOS technology; Circuits; Costs; Electrostatic discharge; Photonic band gap; Resistors; Semiconductor device modeling; Silicides; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
