Title :
New salicidation technology with Ni(Pt) alloy for MOSFETs
Author :
Lee, P.S. ; Pey, K.L. ; Mangelinck, D. ; Ding, J. ; Chi, D.Z. ; Chan, L.
Author_Institution :
Dept. of Mater. Sci., Nat. Univ. of Singapore, Singapore
Abstract :
A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700/spl deg/C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750/spl deg/C and 700/spl deg/C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) window by delaying the nucleation of NiSi/sub 2/ and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.
Keywords :
MOSFET; leakage currents; nickel alloys; platinum alloys; rapid thermal processing; semiconductor device metallisation; thermal stability; 15 nm; 30 nm; 700 C; 750 C; MOSFETs; Ni-Pt; Ni-Pt alloy salicidation technology; Ni-Pt alloyed silicidation; Ni-Pt thickness; NiPtSi; NiSi; PMOSFETs; agglomeration; high drive current; low junction leakage; nucleation delay; rapid thermal processing window; salicide technology; salicided narrow poly-Si lines; sheet resistance; thermal stability; Atomic measurements; Delay; Implants; MOSFETs; Nickel alloys; Rapid thermal processing; Silicidation; Silicides; Temperature; Thermal stability;
Journal_Title :
Electron Device Letters, IEEE
