• DocumentCode
    1557174
  • Title

    4H-SiC RF power MOSFETs

  • Author

    Alok, D. ; Arnold, E. ; Egloff, R. ; Barone, J. ; Murphy, J. ; Conrad, R. ; Burke, J.

  • Author_Institution
    Philips Labs., North American Philips Corp., Briarcliff Manor, NY, USA
  • Volume
    22
  • Issue
    12
  • fYear
    2001
  • Firstpage
    577
  • Lastpage
    578
  • Abstract
    A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance. The cut-off frequency of the device with 1-μm gate length was in excess of 7 GHz.
  • Keywords
    contact resistance; inversion layers; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device metallisation; silicon compounds; wide band gap semiconductors; 1 micron; 7 to 8 GHz; RF power MOSFETs; SiC; contact resistance; cut-off frequency; gate length; inversion-layer mobility; lateral MOSFET; two-metal-layer process; Annealing; Argon; Contact resistance; Furnaces; MOSFETs; Nitrogen; Oxidation; Radio frequency; Silicon carbide; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.974582
  • Filename
    974582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1557174