Title :
Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulation
Author :
Verzellesi, G. ; Meneghesso, G. ; Cavallini, A. ; Zanoni, E.
Author_Institution :
Dipt. di Sci. dell´´Ingegneria, Modena Univ., Italy
Abstract :
Deep levels with activation energies up to 0.59 eV have been revealed in buried gate, n-channel 6H-silicon carbide JFETs, by means of capacitance- and current-mode deep level transient spectroscopy. Numerical device simulations of the drain-current transients following a gate-to-source voltage step have enabled us to localize the different deep levels both energetically and spatially.
Keywords :
deep level transient spectroscopy; deep levels; hole traps; junction gate field effect transistors; semiconductor device measurement; semiconductor device models; silicon compounds; wide band gap semiconductors; 0.18 to 0.59 eV; 6H-SiC; SiC; activation energies; buried-gate JFETs; capacitance-mode deep level transient spectroscopy; current-mode deep level transient spectroscopy; deep levels; drain-current transients; gate-to-source voltage step; n-channel devices; numerical device simulation; spatial localization; trap energetic localization; Capacitance; Electric variables; Electric variables measurement; JFETs; Numerical simulation; Silicon carbide; Silicon compounds; Spectroscopy; Two dimensional displays; Voltage;
Journal_Title :
Electron Device Letters, IEEE
