Title :
The impact of postbreakdown gate leakage on MOSFET RF performances
Author :
Pantisano, Luigi ; Cheung, K.P.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
When the gate-oxide of a MOSFET breaks down, a leakage path is created between channel and gate. In this work, we demonstrate that a simple leakage current increase model can predict the impact of gate-oxide breakdown on MOSFET performance from dc to microwave frequency. We show that severe reduction in RF performance due to input/output mismatch and a gain reduction can result from gate-oxide breakdown.
Keywords :
MOSFET; UHF field effect transistors; leakage currents; microwave field effect transistors; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOSFET; RF performances; gain reduction; gate-oxide breakdown; input/output mismatch; leakage current increase model; leakage path; postbreakdown gate leakage; Breakdown voltage; CMOS technology; Electric breakdown; Gate leakage; Leakage current; MOSFET circuits; Performance gain; Predictive models; Radio frequency; Silicon;
Journal_Title :
Electron Device Letters, IEEE
