Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress

Author

Lochtefeld, Anthony ; Antoniadis, Dimitri A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

22

Issue

12

fYear

2001

Firstpage

591

Lastpage

593

Abstract

The importance of low-field mobility to the performance of deep-sub-100-nm bulk MOSFETs is not well understood. In this work, we investigate experimentally how effective electron mobility at low lateral electric fields relates to velocity in the MOSFET saturation regime, where lateral fields in the channel are high. For short (L/sub eff//spl ap/45 nm) NMOS devices, mobility is modified by externally applying uniaxial stress and the corresponding shifts in electron velocity are found to be significant.

Keywords

MOSFET; electron mobility; inversion layers; piezoresistance; semiconductor device measurement; 45 nm; MOSFET saturation regime; carrier velocity; deeply scaled NMOS; effective electron mobility; electron mobility; electron velocity shifts; low lateral electric fields; low-field mobility; mechanical stress; short NMOS devices; strained Si; uniaxial stress; CMOS technology; Capacitive sensors; Doping; Electrical resistance measurement; Electron mobility; MOS devices; MOSFETs; Silicon on insulator technology; Strain measurement; Tensile stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.974587

Filename

974587