Title :
New method for extraction of MOSFET parameters
Author :
Jin He ; Xing Zhang ; Yangyuan Wang ; Ru Huang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, which relies on combining drain current and output conductance characteristics, enables reliable values of the threshold voltage V/sub th/, mobility μ0 and the mobility attenuation coefficient /spl theta/ to be obtained. Extracted results have been shown in good agreement with that of the second-derivative method, showing the validity of our presented method.
Keywords :
MOSFET; carrier mobility; electric admittance; semiconductor device models; semiconductor device testing; MOSFET parameter extraction; drain current characteristics; mobility; mobility attenuation coefficient; modeling; output conductance characteristics; second-derivative method; threshold voltage; Attenuation; Capacitance; Equations; Helium; MOSFET circuits; Microelectronics; Parameter extraction; Semiconductor devices; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
