Title :
Correction to "Poly-si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping"
Abstract :
In the above-named letter [ibid., vol. 22, pp. 396??398, August 2001] Fig. 4 was incorrect. The corrected figure appears here.
Keywords :
Active matrix liquid crystal displays; Air gaps; Doping; Passivation; Stress; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2001.974593
